@article{oai:fit.repo.nii.ac.jp:00000797,
 author = {一木 亮 and 北﨑 訓 and 小川 友以 and 鈴木 恭一},
 issue = {2},
 journal = {福岡工業大学研究論集},
 month = {Feb},
 note = {Graphene grown on a copper foil was transferred to a SiO2/Si substrate by usinga water transfer sheet and a home-use laminator with four rollers. This method succeeded in transferring the large-area graphene from the copper foil to the substrate easily while maintainingthe crystal quality. Mesoscopic structures were fabricated on the transferred graphene by using photolithography and oxygen plasma etching. As a result of the electric transport measurements, conductive characteristics were created even in a small area of 50 × 50 μm2 at 1.4 K. The carrier density was also controlled by applyingthe gate voltage to the conductive Si layer in the substrate although the variable range of the density was relatively small. With optimization, there is the possibility that this method could take the place of the conventional graphene transfer method., 論文(Article)},
 pages = {65--69},
 title = {水転写シートと家庭用ラミネーターを用いたグラフェン転写},
 volume = {55},
 year = {2023}
}