{"created":"2023-05-15T12:31:12.790358+00:00","id":782,"links":{},"metadata":{"_buckets":{"deposit":"f75ab129-3e1c-4bea-b119-f852704a8d7e"},"_deposit":{"created_by":6,"id":"782","owners":[6],"pid":{"revision_id":0,"type":"depid","value":"782"},"status":"published"},"_oai":{"id":"oai:fit.repo.nii.ac.jp:00000782","sets":["256:305:389"]},"author_link":["3622","3623","3621"],"item_3_alternative_title_23":{"attribute_name":"タイトル（ヨミ）","attribute_value_mlt":[{"subitem_alternative_title":"キドルイ ケイカブツ オ ダツサンソ ショウケツジョザイ トシテ モチイル コウネツ デンドウ チッカ ケイソ ノ カイハツ ケンキュウ"}]},"item_3_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2022-10-31","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"13","bibliographicPageStart":"11","bibliographicVolumeNumber":"5","bibliographic_titles":[{"bibliographic_title":"福岡工業大学総合研究機構研究所所報"}]}]},"item_3_description_17":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_3_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The Silicon Nitride (Si₃N₄) has drawn much attention as electrical substate materials for power module. One of the factors that decrease the thermal conductivity of Si3N4 is phonon scattering caused by the lattice oxygen. Yttrium disilicide (YSi₂) is expected to act as an effective oxygen getter that would actively remove impurity oxygen contained in the raw materials and further added during processing. It was found that the addition of YSi₂ significantly inhibited the phase transformation and densification, which would suggest that YSi₂ effectively acted as an oxygen getter to decrease the SiO₂ content, and hence the amount of the liquid phase. Although the thermal conductivities of gas-pressure sintered Si₃N₄ were improved with increasing the amount of YSi₂, those of reaction-bonded Si₃N₄ were significantly deteriorated due to their much smaller grain size.","subitem_description_type":"Abstract"}]},"item_3_description_47":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"論文(Atticle)","subitem_description_type":"Other"}]},"item_3_full_name_2":{"attribute_name":"著者(ヨミ)","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"3622","nameIdentifierScheme":"WEKO"}],"names":[{"name":"キタヤマ, ミキト"}]}]},"item_3_full_name_3":{"attribute_name":"別言語の著者","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"3623","nameIdentifierScheme":"WEKO"}],"names":[{"name":"KITAYAMA, Mikito"}]}]},"item_3_publisher_37":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"福岡工業大学総合研究機構"}]},"item_3_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"24345725","subitem_source_identifier_type":"ISSN"}]},"item_3_text_38":{"attribute_name":"出版者（ヨミ）","attribute_value_mlt":[{"subitem_text_value":"フクオカ コウギョウ ダイガク ソウゴウ ケンキュウ キコウ"}]},"item_3_text_48":{"attribute_name":"資源タイプ・ローカル","attribute_value_mlt":[{"subitem_text_value":"紀要論文"}]},"item_3_text_49":{"attribute_name":"資源タイプ・NII","attribute_value_mlt":[{"subitem_text_value":"Departmental Bulletin Paper"}]},"item_3_text_50":{"attribute_name":"資源タイプ・DCMI","attribute_value_mlt":[{"subitem_text_value":"text"}]},"item_3_text_51":{"attribute_name":"資源タイプ・ローカル表示コード","attribute_value_mlt":[{"subitem_text_value":"02"}]},"item_3_text_79":{"attribute_name":"コメント","attribute_value_mlt":[{"subitem_text_value":"エレクトロニクス研究所"}]},"item_3_version_type_19":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"北山, 幹人"}],"nameIdentifiers":[{"nameIdentifier":"3621","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","displaytype":"detail","filename":"福工大-総合研究機構-所報5-3.pdf","filesize":[{"value":"2.3 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"url":"https://fit.repo.nii.ac.jp/record/782/files/福工大-総合研究機構-所報5-3.pdf"},"version_id":"0a8b6707-c006-43e9-9963-22018cb1e27d"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Si₃N₄","subitem_subject_scheme":"Other"},{"subitem_subject":"Thermal Conductivity","subitem_subject_scheme":"Other"},{"subitem_subject":"Oxygen getter","subitem_subject_scheme":"Other"},{"subitem_subject_scheme":"Other"},{"subitem_subject":"Si₃N₄","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Thermal Conductivity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Oxygen getter","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"希土類ケイ化物を脱酸素焼結助剤として用いる高熱伝導窒化ケイ素の開発研究","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"希土類ケイ化物を脱酸素焼結助剤として用いる高熱伝導窒化ケイ素の開発研究"},{"subitem_title":"Development of High-Thermal-Conductivity Silicon Nitride using Rare-Earth Silicide as Oxygen Getter","subitem_title_language":"en"}]},"item_type_id":"3","owner":"6","path":["389"],"pubdate":{"attribute_name":"公開日","attribute_value":"2022-12-19"},"publish_date":"2022-12-19","publish_status":"0","recid":"782","relation_version_is_last":true,"title":["希土類ケイ化物を脱酸素焼結助剤として用いる高熱伝導窒化ケイ素の開発研究"],"weko_creator_id":"6","weko_shared_id":-1},"updated":"2023-05-15T12:35:33.085350+00:00"}