@article{oai:fit.repo.nii.ac.jp:00000704,
 author = {服部, 毅範 and 篠田, 鼎},
 issue = {1},
 journal = {福岡工業大学研究論集, RESEARCH BULLETIN OF FUKUOKA INSTITUTE OF TECHNOLOGY},
 month = {Oct},
 note = {application/pdf, 論文(Article), We diffuse impurities to silicon single crystallization and in the semiconductor de vice production laboratory (clean room) on the campus of Fukuoka Institute of Technology, produced pn junction diode experimentally. We measure an electric characteristics of this diode, and consider the voltage-current in low electric current domain.},
 pages = {183--188},
 title = {pn接合ダイオードの試作とその電気的特性},
 volume = {29},
 year = {1996}
}