{"created":"2023-05-15T12:31:07.304086+00:00","id":682,"links":{},"metadata":{"_buckets":{"deposit":"2eb12e82-55e6-490b-a120-cfbd1e0959cd"},"_deposit":{"created_by":6,"id":"682","owners":[6],"pid":{"revision_id":0,"type":"depid","value":"682"},"status":"published"},"_oai":{"id":"oai:fit.repo.nii.ac.jp:00000682","sets":["256:257:369"]},"author_link":["3175","3174","3176","3173","3214","3213"],"item_3_alternative_title_23":{"attribute_name":"タイトル（ヨミ）","attribute_value_mlt":[{"subitem_alternative_title":"FZ オヨビ CZ セイチョウ n ガタ シリコン ニオケル テツカンレン ケッカン ノ ドウニュウ トクセイ"}]},"item_3_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1997-10-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"57","bibliographicPageStart":"51","bibliographicVolumeNumber":"30","bibliographic_titles":[{"bibliographic_title":"福岡工業大学研究論集"},{"bibliographic_title":"RESEARCH BULLETIN OF FUKUOKA INSTITUTE OF TECHNOLOGY","bibliographic_titleLang":"en"}]}]},"item_3_description_17":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_3_description_47":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"論文(Article)","subitem_description_type":"Other"}]},"item_3_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"From deep level transient spectroscopy and Hall effect, it is shown that iron in Czochralski (CZ) n-type silicon can also be electrically ionized. In the in-diffusion process, the results suggest that the observed defects are intermediate states in iron-related complex formation process produced by a consecutive defect reaction. It is concluded that negatively charged and positively charged iron states coexist in CZ-grown n-type silicon as well as in floating zone (FZ)-grown n-type silicon. 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