@article{oai:fit.repo.nii.ac.jp:00000682,
 author = {田中, 秀司 and 北川, 興},
 issue = {1},
 journal = {福岡工業大学研究論集, RESEARCH BULLETIN OF FUKUOKA INSTITUTE OF TECHNOLOGY},
 month = {Oct},
 note = {application/pdf, 論文(Article), From deep level transient spectroscopy and Hall effect, it is shown that iron in Czochralski (CZ) n-type silicon can also be electrically ionized. In the in-diffusion process, the results suggest that the observed defects are intermediate states in iron-related complex formation process produced by a consecutive defect reaction. It is concluded that negatively charged and positively charged iron states coexist in CZ-grown n-type silicon as well as in floating zone (FZ)-grown n-type silicon.},
 pages = {51--57},
 title = {FZおよびCZ成長n形シリコンにおける鉄関連欠陥の導入特性},
 volume = {30},
 year = {1997}
}