@article{oai:fit.repo.nii.ac.jp:00000673,
 author = {田中, 秀司 and 北川, 興},
 issue = {1},
 journal = {福岡工業大学研究論集, RESEARCH BULLETIN OF FUKUOKA INSTITUTE OF TECHNOLOGY},
 month = {Oct},
 note = {application/pdf, 論文(Article), In order to examine the cohesion mechanisms of iron-related defects (IRD) in n-type silicon, the recombination-enhanced dissociation of iron-related donor defects is investigated with minority carrier (hole) injection into the iron-doped n-type region of a p⁺/n epitaxial silicon diode. While the dissociation rate increases with the increase of forward current of the diode, the activation energy of the dissociation time constant is found to be about 0.65 e V which is the same as that of thermal dissociation time constant. The results indicate that a simple electrostatic attractive force takes part in the formation of the IRD.},
 pages = {77--82},
 title = {シリコンp⁺/nエピタキシャルダイオードヘの正孔注入によるn形シリコン中鉄関連欠陥の再結合増速解離},
 volume = {32},
 year = {1999}
}