{"created":"2023-05-15T12:30:54.290547+00:00","id":478,"links":{},"metadata":{"_buckets":{"deposit":"9f6678c3-ac66-45e3-988c-f53b1c82a4c1"},"_deposit":{"created_by":2,"id":"478","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"478"},"status":"published"},"_oai":{"id":"oai:fit.repo.nii.ac.jp:00000478","sets":["256:305:306"]},"author_link":["2290","2286","2293","2287","2288","2291","2294","2292","2289"],"item_3_alternative_title_23":{"attribute_name":"タイトル（ヨミ）","attribute_value_mlt":[{"subitem_alternative_title":"MBEホウ ニヨル バッファーソウ  (SiC(0001) 6√3x6√3R30°)ジョウ エノ グラフェン セイチョウ"}]},"item_3_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-12","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"11","bibliographicPageStart":"7","bibliographicVolumeNumber":"1","bibliographic_titles":[{"bibliographic_title":"福岡工業大学総合研究機構研究所所報"}]}]},"item_3_description_17":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_3_description_47":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"論文(Article)","subitem_description_type":"Other"}]},"item_3_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"To achieve the high quality graphene by molecular beam epitaxy (MBE), we previously obtained the suggestions that appropriate interaction between growth material and substrate is needed for the epitaxial growth of the graphene although inert surface is favorable for the substrates. Thus, we investigated MBE growth of graphene on the buffer layer (SiC(0001) 6√3x6√3R30°), whose atomic arrangement is the same as the graphene although its interaction is expected to be stronger than that of graphene because some carbon atoms of the buffer layer bond with underlying Si atoms and form electric dipoles by the charge inhomogeneity. Then, we achieved the epitaxial growth of graphene and the mobility value of 194cm2/V•s was obtained. This value is the highest value for the MBE-grown graphene.","subitem_description_type":"Other"}]},"item_3_full_name_2":{"attribute_name":"著者(ヨミ)","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"2289","nameIdentifierScheme":"WEKO"}],"names":[{"name":"マエダ, フミヒコ"}]},{"nameIdentifiers":[{"nameIdentifier":"2290","nameIdentifierScheme":"WEKO"}],"names":[{"name":"タカムラ, マコト"}]},{"nameIdentifiers":[{"nameIdentifier":"2291","nameIdentifierScheme":"WEKO"}],"names":[{"name":"ヒビノ, ヒロキ"}]}]},"item_3_full_name_3":{"attribute_name":"別言語の著者","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"2292","nameIdentifierScheme":"WEKO"}],"names":[{"name":"MAEDA, Fumihiko"}]},{"nameIdentifiers":[{"nameIdentifier":"2293","nameIdentifierScheme":"WEKO"}],"names":[{"name":"TAKAMURA, Makoto"}]},{"nameIdentifiers":[{"nameIdentifier":"2294","nameIdentifierScheme":"WEKO"}],"names":[{"name":"HIBINO, Hiroki"}]}]},"item_3_publisher_37":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"福岡工業大学総合研究機構"}]},"item_3_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"24345725","subitem_source_identifier_type":"ISSN"}]},"item_3_text_18":{"attribute_name":"形態","attribute_value_mlt":[{"subitem_text_value":"1283952 bytes"}]},"item_3_text_38":{"attribute_name":"出版者（ヨミ）","attribute_value_mlt":[{"subitem_text_value":"フクオカ コウギョウ ダイガク ソウゴウ ケンキュウ キコウ"}]},"item_3_text_48":{"attribute_name":"資源タイプ・ローカル","attribute_value_mlt":[{"subitem_text_value":"紀要論文"}]},"item_3_text_49":{"attribute_name":"資源タイプ・NII","attribute_value_mlt":[{"subitem_text_value":"Departmental Bulletin Paper"}]},"item_3_text_50":{"attribute_name":"資源タイプ・DCMI","attribute_value_mlt":[{"subitem_text_value":"text"}]},"item_3_text_51":{"attribute_name":"資源タイプ・ローカル表示コード","attribute_value_mlt":[{"subitem_text_value":"01"}]},"item_3_text_79":{"attribute_name":"コメント","attribute_value_mlt":[{"subitem_text_value":"エレクトロニクス研究所(Electronics Research Laboratory)"}]},"item_3_version_type_19":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"前田, 文彦"}],"nameIdentifiers":[{"nameIdentifier":"2286","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高村, 真琴"}],"nameIdentifiers":[{"nameIdentifier":"2287","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"日々野, 浩樹"}],"nameIdentifiers":[{"nameIdentifier":"2288","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-09-14"}],"displaytype":"detail","filename":"MBE法によるバッファー層(SiC(0001) 6√3x6√3R30°)上へのグラフェン成長.pdf","filesize":[{"value":"1.3 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"MBE法によるバッファー層(SiC(0001) 6√3x6√3R30°)上へのグラフェン成長.pdf","url":"https://fit.repo.nii.ac.jp/record/478/files/MBE法によるバッファー層(SiC(0001) 6√3x6√3R30°)上へのグラフェン成長.pdf"},"version_id":"1d793844-9534-4edc-a832-c6a16b2c2421"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"molecular beam epitaxy","subitem_subject_scheme":"Other"},{"subitem_subject":"Graphene","subitem_subject_scheme":"Other"},{"subitem_subject":"SiC(0001)","subitem_subject_scheme":"Other"},{"subitem_subject":"molecular beam epitaxy","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Graphene","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"SiC(0001)","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"MBE法によるバッファー層(SiC(0001)6√3x6√3R30°)上へのグラフェン成長","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"MBE法によるバッファー層(SiC(0001)6√3x6√3R30°)上へのグラフェン成長"},{"subitem_title":"Graphene growth on the buffer layer of SiC(0001) by molecular beam epitaxy","subitem_title_language":"en"}]},"item_type_id":"3","owner":"2","path":["306"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-04-17"},"publish_date":"2019-04-17","publish_status":"0","recid":"478","relation_version_is_last":true,"title":["MBE法によるバッファー層(SiC(0001)6√3x6√3R30°)上へのグラフェン成長"],"weko_creator_id":"2","weko_shared_id":2},"updated":"2023-05-15T12:49:09.946373+00:00"}