{"created":"2023-05-15T12:30:52.401885+00:00","id":446,"links":{},"metadata":{"_buckets":{"deposit":"17af1496-a647-46bb-8a64-779fae62710e"},"_deposit":{"created_by":2,"id":"446","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"446"},"status":"published"},"_oai":{"id":"oai:fit.repo.nii.ac.jp:00000446","sets":["256:257:300"]},"author_link":["2110","2770","2109"],"item_3_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009-09-28","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"5","bibliographicPageStart":"1","bibliographicVolumeNumber":"42","bibliographic_titles":[{"bibliographic_title":"福岡工業大学研究論集"}]}]},"item_3_description_17":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_3_description_47":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"論文(Article)","subitem_description_type":"Other"}]},"item_3_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"We compare the area scaling trend of various SRAM margin-assist solutions for V[T] variability issues, which are based on efforts by not only the cell topology changes from 6T to 8T and 10T but also incorporating multiple voltages supply and timing sequence controls of read and write. The various solutions are analyzed in light of an impact of ever increasing V[T] variation (σ[VT]) on the required area overhead for each design solution, resulting in slowdown in the scaling pace. If σ[VT] suppressed to ＜70mV even at 15nm node, it has been found that 6T will be allowed long reign even in 15nm if σ[VT] can be suppressed to ＜70mV thanks to EOT scaling for LSTP process,otherwise 10T and 8T with read modify write will be needed.","subitem_description_type":"Other"}]},"item_3_full_name_2":{"attribute_name":"著者(ヨミ)","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"2770","nameIdentifierScheme":"WEKO"}],"names":[{"name":"ヤマウチ, ヒロユキ"}]}]},"item_3_full_name_3":{"attribute_name":"別言語の著者","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"2110","nameIdentifierScheme":"WEKO"}],"names":[{"name":"山内, 寛行"}]}]},"item_3_publisher_37":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"福岡工業大学"}]},"item_3_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"02876620","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN10036974","subitem_source_identifier_type":"NCID"}]},"item_3_text_18":{"attribute_name":"形態","attribute_value_mlt":[{"subitem_text_value":"1736714 bytes"}]},"item_3_text_38":{"attribute_name":"出版者（ヨミ）","attribute_value_mlt":[{"subitem_text_value":"フクオカ コウギョウ ダイガク"}]},"item_3_text_39":{"attribute_name":"別言語の出版者","attribute_value_mlt":[{"subitem_text_value":"Fukuoka Institute of Technology"}]},"item_3_text_48":{"attribute_name":"資源タイプ・ローカル","attribute_value_mlt":[{"subitem_text_value":"紀要論文"}]},"item_3_text_49":{"attribute_name":"資源タイプ・NII","attribute_value_mlt":[{"subitem_text_value":"Departmental Bulletin Paper"}]},"item_3_text_50":{"attribute_name":"資源タイプ・DCMI","attribute_value_mlt":[{"subitem_text_value":"text"}]},"item_3_text_51":{"attribute_name":"資源タイプ・ローカル表示コード","attribute_value_mlt":[{"subitem_text_value":"02"}]},"item_3_version_type_19":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"YAMAUCHI, Hiroyuki"}],"nameIdentifiers":[{"nameIdentifier":"2109","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-09-14"}],"displaytype":"detail","filename":"11478-974_p1山内　寛行.pdf","filesize":[{"value":"1.7 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"11478-974_p1山内　寛行.pdf","url":"https://fit.repo.nii.ac.jp/record/446/files/11478-974_p1山内　寛行.pdf"},"version_id":"612b6c44-80aa-454a-b5a0-2b216e0e8d1e"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"SRAM scaling","subitem_subject_scheme":"Other"},{"subitem_subject":"SRAM margin assist","subitem_subject_scheme":"Other"},{"subitem_subject":"V[T] variation","subitem_subject_scheme":"Other"},{"subitem_subject":"EOT scaling","subitem_subject_scheme":"Other"},{"subitem_subject":"multiple voltage","subitem_subject_scheme":"Other"},{"subitem_subject":"SRAM scaling","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"SRAM margin assist","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"V[T] variation","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"EOT scaling","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"multiple voltage","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"A Review and Prospect of Area Scaling Trend for SRAM CircuitDesign Solution in Deeper Nano-meter Era","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"A Review and Prospect of Area Scaling Trend for SRAM CircuitDesign Solution in Deeper Nano-meter Era"}]},"item_type_id":"3","owner":"2","path":["300"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-06-22"},"publish_date":"2018-06-22","publish_status":"0","recid":"446","relation_version_is_last":true,"title":["A Review and Prospect of Area Scaling Trend for SRAM CircuitDesign Solution in Deeper Nano-meter Era"],"weko_creator_id":"2","weko_shared_id":2},"updated":"2023-05-15T13:46:33.290569+00:00"}