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        <identifier>oai:fit.repo.nii.ac.jp:00000633</identifier>
        <datestamp>2023-05-15T13:04:32Z</datestamp>
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          <dc:title>チョウデンドウ ヘイバンチュウ ノ シャヘイ デンリュウ ゼンセン ケイジョウ ノ ジカイ イゾンセイ</dc:title>
          <dc:title>超伝導平板中の遮蔽電流前線形状の磁界依存性</dc:title>
          <dc:title>Magnetic Field Dependence of a Configuration of Shielding Cu汀ent Front in a Superconducting Plate</dc:title>
          <dc:creator>野田, 稔</dc:creator>
          <dc:creator>2985</dc:creator>
          <dc:subject>superconducting plate</dc:subject>
          <dc:subject>shielding current front</dc:subject>
          <dc:subject>the n-th order power</dc:subject>
          <dc:subject>error field in the shielded region</dc:subject>
          <dc:subject>superconducting plate</dc:subject>
          <dc:subject>shielding current front</dc:subject>
          <dc:subject>the n-th order power</dc:subject>
          <dc:subject>error field in the shielded region</dc:subject>
          <dc:description>application/pdf</dc:description>
          <dc:description>論文(Article)</dc:description>
          <dc:description>In a superconducting plate having aspect ratio of 5, a front configuration of the shielding current region can be well approximated by a curve with the n-th order power, over wide range of normalized external magnetic field ĥe= 0~1.6. For medium and high field range of ĥe= 0.6~1.6, n takes about 2, and shielding effect is quite favorable, so that error field in the shielded region is merely within 0.1 % of ĥe. For low field range of  ĥe&lt;0.5, on the contrary, n grows up rapidly as ĥe decreases. For example, n takes 12.7 when ĥe= 0.1. Current front having such large n cannot shield the interior uniformly, so that error field increases abruptly near the front, reaching to about 2% of ĥe when ĥe= 0.1. Our method can be available for technical applications such as a superconducting tape, because of its sim­plicity and adequate precision.</dc:description>
          <dc:description>departmental bulletin paper</dc:description>
          <dc:publisher>福岡工業大学</dc:publisher>
          <dc:date>2004-02-10</dc:date>
          <dc:type>VoR</dc:type>
          <dc:format>application/pdf</dc:format>
          <dc:identifier>福岡工業大学研究論集</dc:identifier>
          <dc:identifier>2</dc:identifier>
          <dc:identifier>36</dc:identifier>
          <dc:identifier>193</dc:identifier>
          <dc:identifier>199</dc:identifier>
          <dc:identifier>RESEARCH BULLETIN OF FUKUOKA INSTITUTE OF TECHNOLOGY</dc:identifier>
          <dc:identifier>02876620</dc:identifier>
          <dc:identifier>https://fit.repo.nii.ac.jp/record/633/files/36(2)-193.pdf</dc:identifier>
          <dc:identifier>http://hdl.handle.net/11478/00001598</dc:identifier>
          <dc:identifier>https://fit.repo.nii.ac.jp/records/633</dc:identifier>
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