2026-03-13T11:34:09Z https://fit.repo.nii.ac.jp/oai

oai:fit.repo.nii.ac.jp:00000503 2023-05-15T13:55:57Z 256:257:309

Disappearance of the Self-Interstitial during Diffusion of the Phosphorus-Self-Interstitial Pair in Silicon on the Basis of One-Bond-Type Migration 田中, 秀司 2432 師岡, 正美 2433 吉田, 正幸 2434 interstitialcy mechanism one-bond-type migration disappearance of self-interstitial interstitialcy mechanism one-bond-type migration disappearance of self-interstitial application/pdf 論文(Article) In the interstitialcy mechanism of diffusion of phosphorus-self-interstitial pairs on the basis of one-bond-type migration,the split-＜100＞ configuration and the bond-centered configuration are repeated. This is studied theoretically using three dimensional schemata. It is found that the self-interstitial disappears in the bond-centered configuration. This finding contrasts with that of Fahey,Griffin, and Plummer,who reported that, probably on the basis of two-bond-type migration, the interstitialcy mechanism will operate only if the diffusing defect, the phosphorusself-interstitial pair, does not dissociate. departmental bulletin paper 福岡工業大学 2013-02 VoR application/pdf 福岡工業大学研究論集 2 45 47 49 02876620 AN10036974 https://fit.repo.nii.ac.jp/record/503/files/11478-1271_p47.pdf http://hdl.handle.net/11478/1271 https://fit.repo.nii.ac.jp/records/503 eng